Isolated Gate Drivers

Self-Powered Isolated GaN FET Driver with Regulated Bipolar Output

AHV85111

The AHV85111 offers precise and flexible gate drive for GaN FETs, with a regulated bipolar output, adjustable positive rail, and integrated bias supply for simplified design and improved dv/dt immunity.

Product Details

Top Features

  • Transformer isolation barrier
  • Power-Thru integrated isolated bias
    • No need for high-side bootstrap
    • No need for external secondary-side bias  
  • AEC-Q100 Grade 2 qualification
  • Bipolar drive output with adjustable regulated positive rail
  • Built-in primary-side 3.3V REF bias output
  • 50ns propagation delay
  • Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
  • Supply voltage 10.8 V < VDRV < 13.2 V
  • Undervoltage lockout on primary VDRV and secondary VSEC
  • Enable pin with fast response
  • Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor
  • CMTI > 100 V/ns dv/dt immunity
  • Creepage distance 8.4 mm
  • Safety Regulatory Approvals
    • 5 kV RMS VISO per UL 1577
    • 8 kV pk VIOTM maximum transient isolation voltage
    • 1 kV pk maximum working isolation voltage

Part Number Specifications and Availability

Part Number Specifications and Availability

AHV85111 Product Overview

The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications. An isolated dual positive/negative output bias supply is integrated into the driver device, eliminating external gate drive auxiliary bias supply or high-side bootstrap.

Design Tools