APS12450: Three-Wire Hall-Effect Latch with Advanced Diagnostics

APS12450

Description

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The APS12450 is a three-wire planar Hall-effect sensor integrated circuit (IC) developed in accordance with ISO 26262 (pending assessment). It includes internal diagnostics and a fault state that support functional safety. The enhanced three-wire interface provides interconnect open/short diagnostics and a fault state to communicate diagnostic information while maintaining compatibility with legacy three-wire systems. The continuous background diagnostics are transparent to the host system and results in a reduced fault tolerant time.

The APS12450 product options include magnetic switchpoints, temperature coefficient, and output polarity. The response can be matched to SmCo, NdFeB, or low-cost ferrite magnets. For situations where a functionally equivalent three-wire switch device is preferred, refer to the APS11450.

APS12450 sensors are engineered to operate in the harshest environments with minimal external components. They are qualified beyond the requirements of AEC-Q100 Grade 0 and will survive extended operation at 175°C junction temperature.

These monolithic ICs include on-chip reverse-battery protection, overvoltage protection (e.g., 40 V load dump), ESD protection, overtemperature detection, and an internal voltage regulator for operation directly from an automotive battery bus. These integrated features reduce the end-product bill-of-materials (BOM) and assembly cost.

ASIL Logo

APS12450 was developed in accordance with ISO 26262:2011 as a hardware safety element out of context with ASIL B capability (pending assessment) for use in automotive safety-related systems when integrated and used in the manner prescribed in the applicable safety manual and datasheet.
  • Functional safety
    • Developed in accordance with ISO 26262:2011 (pending assessment)
    • Integrated background diagnostics for:
      • Signal path
      • Regulator
      • Hall plate and bias
      • Overtemperature detection
      • Nonvolatile memory
    • Defined fault state
  • Multiple product options
    • Magnetic polarity, switchpoints, and hysteresis
    • Temperature coefficient
    • Output polarity
  • Reduces module bill-of-materials (BOM) and assembly cost
    • ASIL B sensor can replace redundant sensors
    • Integrated overvoltage clamp and reverse-battery diode
  • Automotive-grade ruggedness and fault tolerance
    • Extended AEC-Q100 Grade 0 qualification
    • Operation to 175°C junction temperature
    • 3 to 30 V operating voltage range
    • ±8 kV HBM ESD
    • Overtemperature indication

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Documentation and Resources

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