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AHV85110

Self-Powered Single-Channel Isolated GaNFET Gate Driver with Power-Thru Integrated Isolated Bias Supply

Isolated ganfet Gate Driver - NH Packaging Image

AHV85110 ECAD Model
Datasheets
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Description

Top Features

Typical Applications

Packaging

The AHV85110 isolated gate driver is optimized for driving GaNFETs in multiple applications and topologies. An isolated output bias supply is integrated into the driver device, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap. This greatly simplifies the system design and reduces EMI through reduced total common-mode (CM) capacitance. It also allows the driving of a floating switch in any location in a switching power topology.

The driver has fast propagation delay and high peak source/ sink capability to efficiently drive GaNFETs in high-frequency designs. High CMTI combined with isolated outputs for both bias power and drive make it ideal in applications requiring isolation, level-shifting, or ground separation for noise immunity.

  • Power-Thru integrated isolated bias
    • No high-side bootstrap
    • No external secondary-side bias
  • 50 ns propagation delay, with excellent device-to-device
    matching of 5 ns
  • Separate drive output pins: pull-up (2.8 Ω) and pull-down
    (1.0 Ω)
  • Supply voltage 10.5 V < VDRV < 13.2 V
  • Undervoltage lockout on primary VDRV and secondary VSEC
  • AC-DC and DC-DC converters – totem-pole PFC, Half-/Full-Bridge, LLC, SR Drive, multi-level converters, phase-shifted full-bridge, etc.
  • Automotive – OBC, Traction Drive
  • Industrial – Transportation, Robotics
  • Grid Infrastructure – Micro-Inverters, solar
Isolated ganfet Gate Driver - NH Packaging Image

The device is available in a 12-pin, low-profile surface-mount NH package. It measures 10 mm × 7.66 mm × 2.53 mm. Several protection features are integrated, including undervoltage lockout on primary and secondary bias rails, internal pull-down on IN pin and OUTPD pin, fast response enable input, and OUT pulse synchronization with first IN rising edge after enable (avoids asynchronous runt pulses).

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NOTE: Both products must be ordered as a dual chipset

Part Number Specifications and Availability

HV Isolated Gate drivers

Driver Switch #Channels Polarity Working Voltage Isolation Package Availability Datasheet Samples
Driver AHV85110 Switch GaN #Channelssingle Polarity unipolar Working Voltage630 Isolation5KV PackageNH Availabilityavailable Datasheetrequest full datasheet Samplesrequest samples

 

HV Isolated Evaluation Boards

EVK PN Switch Supplier / PN Description Gate Driver Used
APEK85110KNH-01-T-MH E-Mode GaN GaN Systems GS66516B Half-bridge bipolar driver-switch board AHV85110 Buy Now
APEK85110KNH-05-T-MH E-Mode GaN Nexperia GAN080-650EBE Half-bridge bipolar driver-switch board AHV85110 Buy Now
APEK85110KNH-06-T-MH GaN Transphorm TP65H070G4QS Half-bridge bipolar driver-switch board AHV85110 Buy Now

Documentation and Resources

Documentation

Design Tools

Filter Document Type:
All Types
All Types Application Note Infographic Technical Article Video
Documents Found: 32
Document Type Document Name
Application Note
Minimizing PCB Parasitic Effects with Optimum Layout of the Gate Driver Loop Applicable to AHV85110 AND AHV85111 Gate Drivers
Application Note
FET Gate Drive and Bipolar Output Applicable to AHV85110KNHTR Gate Drivers
Infographic
Design and Application Guide for AHV85110
Technical Article
March 28, 2023
Solving the Challenges of Increasing Power Density by Reducing Number of Power Rails
Technical Article
November 22, 2022
Simplify Power Module Design with Power-Thru Technology
Video
AHV85110 Product Overview
Filter Document Type:
All Types
All Types SPICE Model User Guide
Documents Found: 32
Document Type Document Name
SPICE Model
High Voltage Gate Driver SPICE Model
User Guide
APEK85110 Demonstration Board User Manual